al58 02lp4 document number: ds37441 rev. 4 - 2 1 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information 30v, adjustable current sink linear led driver description the al5802 lp 4 combines a high - gain npn transistor with a pre - biased npn transistor to make a simple small footprint led driver. the led current is set by an external resistor connected from r ext p in ( 2 ) to gnd p in ( 1 ) . t he internal high - gain transistor develops approximately 0.6v across the external resistor. the al5802 lp 4 s pwm dimming of the led current can be achieved by either driving the bias p in ( 4 ) with a low impedance voltage source, or driving the en p in ( 6 ) with an exter nal open - collector npn transistor or open - drain n - c hannel mosfet. the al5802 lp 4 is available in a x2 - dfn1310 - 6 package and is ideal for driving up to 1 2 0ma current. features ? rext = 0.65v ? ? ? C ? ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) pin assignments mechanical data ? ? molded plastic, green molding compound. ? ? ? applications ? ? ? ordering information (note 8 ) de vice qualification packaging tape and reel quantity part number suffix a l58 02 lp4 commercial x2 - dfn1310 - 6 3,000/tape & reel - 7 note: 8. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. internal schematic (top view) ( bottom view) 8 02 = product type marking code e4
al58 02lp4 document number: ds37441 rev. 4 - 2 2 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information typical application circuit pin descriptions pin number name function 1 gnd ground reference p oint for s etting led c urrent 2 r ext current s ense p in led c urrent s ensing r esistor s hould be c onnected from h ere to gnd 3 out open - c ollector led d river o utput 4 bias biases the open c ollector o utput t ransistor 5 n/c no connection 6 en enable pin for pwm dimming provides access to the base of q2 and collector of q1 functional block diagram figure 1 block diagram
al58 02lp4 document number: ds37441 rev. 4 - 2 3 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information absolute maximum ratings symbol characteristics values unit v out output v oltage r elative to gnd 3 0 v v bias bias v oltage r elative to gnd 30 v v fb led v oltage r elative to gnd 6 v v en en v oltage r elative to gnd 6 v v re x t r ext v oltage r elative to gnd 6 v i out output c urrent 1 2 0 ma t j operating j unction t emperature - 40 to + 150 c t st storage t emperature - 55 to + 150 c these are stress ratings only. operation outside the absolute maximum ratings may cause device failure. operation at the abso lute maximum rating for extended periods may reduce device reliability. package thermal data characteristic symbol value unit power dissipation (note 4 ) @t a = + 25c p d 0. 36 w thermal resistance, junction to ambient air (note 4 ) @t a = + 25c r ja 347 c/w recommended operating conditions symbol parameter min max unit v bias supply v oltage r ange 4.5 30 v v out out v oltage r ange 0.8 30 i led led p in c urrent (note 5 ) 10 1 0 0 ma t a operating a mbient t emperature r ange - 40 + 125 c notes : 4 . device mounted on fr - 4 pcb , 2oz with minimum recommended pad layout. 5 . subject to ambient temperature, power dissipation and pcb.
al58 02lp4 document number: ds37441 rev. 4 - 2 4 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information electrical characteristics : npn transistor C q1 (@ t a = +25c, unless otherwise specified.) symbol characteristic test condition min typ max unit v (br)ceo collector - emitter breakdown voltage (note 6 ) (note 7) i c = 1.0ma, i b = 0 40 v v (br)ebo emitter - base breakdown voltage i e = 10a, i c = 0 6.0 v i cex collector cutoff current (note 7) v ce = 30v, v eb(off) = 3.0v 50 na i bl base cutoff current (note 7) v ce = 30v, v eb(off) = 3.0v 50 na h fe dc current gain i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v 70 100 300 v ce(sat) collector - emitter saturation voltage (note 6 ) i c = 10ma, i b = 1.0ma 0.20 v v be(sat) base - emitter saturation voltage i c = 10ma, i b = 1.0ma 0.65 0.85 v v be(on ) base - emitter turn - on voltage v ce = 1.20 v , i c = 2.0 ma 0.30 1.10 v electrical characteristics : npn pre - biased transistor C q2 (@ t a = +25c, unless otherwise specified.) symbol characteristic test condition min typ max unit v (br)cbo collector - base breakdown voltage i c = 50 a, i e = 0 30 v v (br)ceo collector - emitter breakdown voltage (note 6 ) i c = 1ma, i b = 0 30 v v (br)ebo emitter - base breakdown voltage (note 7) i e = 50 a, i c = 0 5.0 v i cbo collector cut o ff current v cb = 30v, i e = 0 0.5 a i ebo emitter cut o ff current (note 7) v eb = 4v, i c = 0 0.5 a v ce(sat) collector - emitter saturation voltage (note 6 ) i c = 10ma, i b = 1ma 0.3 v v be(on ) base - emitter turn - on voltage v ce = 5.0 v , i c = 2.0 ma 0.30 1.10 v h fe dc current gain (note 6 ) v ce = 5v, i c = 150ma 100 r 1 input resistance 7 10 13 k? *characteristics of transistor only. notes: 6 . short duration pulse test used to minimize self - heating effect. 7. guaranteed by design and tested only at the wafer level for single die. these parameters cannot be tested at the finished good level due to test conditions changed after packaging multi - dies to form an application circuit.
al58 02lp4 document number: ds37441 rev. 4 - 2 5 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information thermal characteristics v out (v) figure 3 output current vs. v out v out (v) figure 5 output current vs. v out v out (v) figure 6 output current vs. v out 0 50 100 1 10 100 i ( m a ) o u t r ( ext ) figure 4 output current vs. r ext vbias = 24v vout = 5.4v vout = 1.4v
al58 02lp4 document number: ds37441 rev. 4 - 2 6 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information typical performance characteristics ( c ont inued ) v out (v) figure 7 output current vs. v out v bias (v) figure 8 output current vs. v bias v bias (v) figure 9 output current vs. v bias v bias (v) figure 10 output current vs. v bias v bias (v) figure 11 output current vs. v bias
al58 02lp4 document number: ds37441 rev. 4 - 2 7 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information application information the AL5802LP4 is designed for driving low current leds with typical led current s of 10ma to 100ma. it provides a cost effective way of driving low current leds compared with more complex switching regulator solutions. furthermore, it reduces the pcb board area of the solution as there is no need for external components like inductors, capacitors and switching diodes. figure 12 shows a typical application circuit diagram for driving an led or string of leds. the npn transistor q1 measures th e led current by sensing the voltage across an external resistor r ext . q1 uses its v be as refere nce to set the voltage across r ext and controls the base current into q2. q2 operates in linear mode to regulate the led current. the led current is: i led = v be(q1) / r ext from this, for any required led current the necessary external resistor r ext can b e calculated from : r ext = v be(q1) / i led two or more AL5802LP4 can be connected in parallel to construct higher current led strings as shown in figure 13. consideration of the expected linear mode power dissipation must be factored into the d esign, with respect to the AL5802LP4 's thermal resistance. the maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the led string. v ce(q2) = v cc C v led C v be(q1) p d = v ce(q2) * i led + ( v cc C v be(q2) C v be(q1) ) 2 / r 1 as the output current of AL5802LP4 increases, it is necessary to provide appropriate thermal relief to the device. the power dissipation supported by the device is dependent upon the pcb board material, the copper area and the ambient temperature. the maximum dissipation the device can handle is given by: p d = (t j(max) - t a ) / r ja figure 1 2 typical application circuit for linear mode current sink led driver figure 1 3 application circuit for increasing led current
al58 02lp4 document number: ds37441 rev. 4 - 2 8 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information application information ( c ont inued ) pwm dimming can b e achieved by driving the en p in. an external open - collector npn tra n sistor or open - drain n - c hannel mosfet can be used to drive the en p in as shown in figure 14. dimming is achieved by turning the leds on and off for a portion of a single cycle. the pwm signal can be provided by a micro - controller or analog circuitry. figure 1 6 is a typical response of led current vs . pwm duty cycle on the e n p in. - or - figure 14 application circuits for led driver with pwm dimming functionality fig ure 15 typical led current response vs. pwm duty cycle for r ext = 13 ? at 400hz pwm frequency to remove the potential of incorrect connection of the power supply damaging the lamps leds, many systems use some form of reverse polarity protection. one solution for reverse input polarity protection is to simply use a diode with a low v f in - line with the driver/led combination. the low v f increases the a vailable voltage to the led stack and dissipates less power. a circuit example is presented in fig ure 1 6 using diodes inc orporateds sbr (super barrier rectifier) technology. an sdm10u45lp (0.1a/45v) is shown, providing exceptionally low v f for its package size of 1mm x 0.6mm, equivalent to an 0402 chip style package. other reverse voltage ratings are available o n diodes website , such as the sbr02u100lp (0.2a/100v) or sbr0220lp (0.2a/20v). automotive applications commonly use this method for reverse battery protection. 0 10 20 40 60 80 100 l e d c u r r e n t ( m a ) pwm duty cycle (%) 20 0 30 40 50 60
al58 02lp4 document number: ds37441 rev. 4 - 2 9 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information application information ( c ont.) a second approach, shown in fig ure 1 7 , improves upon the method shown in fig ure 1 6 . whereas the method in fig ure 1 6 protects the light engine, it will not function until the problem is diagnosed and corrected. the method shown in fig ure 1 7 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to function. the bas40brw incorporates four low v f , schottky diodes into a single package and allows more voltage to be available for the led stack and dissipates less power tha n standard rectifier bridges. figure 16 application circuit for led driver with reverse polarity protection figure 17 application circuit for led driver with assured operation regardless of polarity package outline dimensions please see ap0200 1 at http://www.diodes.com/ _files/ datasheets/ap0200 1 .pdf for the latest version. x2 - dfn1310 - 6 x2 - dfn1310 - 6 dim min max typ a ? ? a1 0 0.05 0.02 a3 ? ? b 0.10 0.20 0.15 d 1.25 1.38 1.30 d ? ? ? ? d2 0.30 0.50 0.40 e 0.95 1.075 1.00 e ? ? ? ? e2 0.30 0.50 0.40 f ? ? l 0.20 0.30 0.25 z ? ? ? ? all dimensions in mm r s AL5802LP4 sdm10u45lp v s a a1 a3 seating plane e d2 e2 b (pin #1 id) e l d r0.150 d f f d f f z z
al58 02lp4 document number: ds37441 rev. 4 - 2 10 of 10 www.diodes.com february 2016 ? diodes incorporated advance information new product AL5802LP4 advanced information suggested pad layout please see ap02001 at http://www.diodes.com/ _files/ datasheets/ap02001.pdf for the latest version. x2 - dfn1310 - 6 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporat ed does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. f urther, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com dimensions value (in mm) g1 0.16 g2 0.17 g3 0.15 x1 0.52 x2 0.20 y1 0.52 y2 0.375 a 0.09 b 0.06 b g3 a g2 x2 y2 y1 g1 x1
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